Žó•t“úJASRI No.‰Û‘è”ԍ†‰ïŽÐ–¼•M“ªŽÒŽ–¼”­•\æ‘è–Ú
30804/0910865 C06A16XU-5100•xŽm’ÊŒ¤’W˜H@’¼Ž÷‹@”\Þ—¿iŽGŽj‚wü‰ñÜEŽU—EŒuŒõ‚É‚æ‚é“dŽqÞ—¿ƒiƒm”––Œ‚̍\‘¢•]‰¿ X-ray diffraction, Scattering, and Fluorescence Study for the Nano-level Thin Films used in the Electric Devices
30904/0910866 C05B16B2-5400•xŽm’ÊŒ¤’W˜H@’¼Ž÷‚Ó‚¥‚ç‚ށiŽGŽj•úŽËŒõ‚ð—p‚¢‚½ƒNƒƒ[ƒg”ç–Œ’†‚U‰¿ƒNƒƒ€‚Ì”ñ”j‰ó•ªÍNondestructive Measurement of Hexavalent Chromium in Chromate Conversion Coatings using Synchrotron Radiation
31008/2211341 C03B16XU-3002-PZ—F“dH•ŸˆäŽ¡¢“u—±‰ÁHŠw‰ïŽiAlN–Œ‚ÌŽc—¯‰ž—͐[‚³•ª•z‚ªØí«”\‚É‹y‚Ú‚·‰e‹¿
31108/2211342 C05A16B2-4030-N“Œ‹ž”_H‘å/Z—F“dHY.Kumagai/J.IiharaJ.Cryst.Grouw. 296(2006)11-14Fe-doped semi-insulating GaN substrates prepared by hydride vapor^phase epitaxy using GaAs starting substrates
31208/2211343 C05A16B2-4030-N“Œ‹ž”_H‘å/Z—F“dHR.Togashi/J.IiharaPhys.stat.sol.(b) 244(6),1862-186(2007)First-principles calculation and X-ray absorption fine structure analysis of Fe doping mechanism for semi-insulating GaN growth on GaAs substrates
31308/2211344C04A16XU-3030-N, C04B16XU-3031-N, C05A16XU-3031-NZ—F“dH¬—ѐTˆêFSST NEWS, 144(2007)15-18DI-BSCCO‚ÌŠJ”­-—ÕŠE“d—¬“Á«‚ÌŠÏ“_‚©‚ç-