September 5 (10:10-17:00), 2003, SPring-8, Japan

Industrial Consortium for Material Research (SUNBEAM)

supported by Japan Synchrotron Radiation Research Institute (JASRI) and Industrial Users Society of SPring-8

Organizing Chair: Yasushi UEHARA, Mitsubishi Electric Corporation


Opening address:  Shiro NAKAMURA, Chair of the working committee of SUNBEAM, Mitsubishi Electric Corporation


Opening remarks:  Akira KIRA, Director General of JASRI


SESSION I: Materials/Energy/Environmental                     Session chair:

Recent Applied Research of Synchrotron Radiation inKobe Steel.

A Study for Dislocation-Free Plastic Deformation Mechanism in a New Beta Type Ti Alloy
Yoshiki SENO,
TOYOTA Central R&D Labs., Inc.

XAFS Analysis of Ceria Based Electrolytes Doped with Lanthanide Oxides
Hiroshi DEGUCHI, Kansai Electric Power Co., Inc.

Local Atomic and Electronic Structures of Pt Catalysts Using EXAFS
Kenji KOBAYASHI, Fundamental Res. Labs., NEC Corp.

Local Structure Analysis of Germanium in the Optical Fiber.
Junji IIHARA, Sumitomo Electric Industries, Ltd.


Lunch break (12:00-13:00)


Invited lecture                                                  Chair:

Visualizing Single Domains and Domain Walls with X-Rays
Eric D. ISAACS, Director, Semiconductor Physics Research,
Bell Laboratories, Lucent Technologies


SESSION II: Electronics A                                    Session chair:

Structural Analysis ofInN and GaInN Using XAFS and X-Ray Diffraction Method
Takao MIYAJIMA, Sony Corporation Core Technology & Network Company

Peak Separation of In-plane Diffraction Patterns from Cu/NiFe Thin Film Using Anomalous Dispersion Effect.
Kazuhiro UEDA, Hitachi Ltd.

Grazing Incidence X-Ray Diffraction of Longitudinal and Perpendicular Magnetic Recording Media for HDD
Michio OHSAWA,
Fuji Electric Corporate Research and Development, Ltd.

Crystallographic Characterization of Poly-Si Thin Films
Junichi NISHINO, SANYO Electric Co. Ltd.


Coffee break



SESSION III: Electronics B                              Session chair:

Synchrotron X-Ray Topography Measurements on 4H-SiC Epitaxial Layer
Isaho KAMATA, Central Research Institute of Electric Power Industry

Structural Evaluation of Gate-Oxide/Si Interface by X-Ray CTR Scattering
 DOI, Fujitsu Laboratories Ltd.

ChemicalState Analysis of SiO2/Si by Wavelength-Dispersive X-Ray Fluorescence
Shinji OZAKI, Matsushita Technoresearch Inc.

X-Ray Reflectivity Study on the Density and the Roughness of Silicon Oxide Thin Films under Various Fabirication Condisions.
Kazumasa KAWASE, Mitsubishi Electric Corporation

X-Ray Reflectivity Study of Hafnium Silicate Thin Films Prepared by Thermal Chemical Vapor Deposition
Hideyuki YAMAZAKI, Toshiba Corporation


Closing address: Tokio OHTO, Vice-chair of the working committee of SUNBEAM, Fuji Electric Corporate R& D, Ltd.

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